EFC6601R no. a2151-1/8 features ? 2.5v drive ? protection diode in ? common-drain type ? halogen free compliance ? 2kv esd hbm speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit source-to-source voltage v sss 24 v gate-to-source voltage v gss 12 v source current (dc) i s 13 a source current (pulse) i sp pw 10 s, duty cycle 1% 60 a total dissipation p t when mounted on ceramic substrate (5000mm 2 0.8mm) 2.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7073-001 ordering number : ena2151 n2112 tkim tc-00002837/hd 121009 pf sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : efcp ? jeita, jedec : - ? minimum packing quantity : 5,000 pcs./reel taping type : tr marking electrical connection 4, 6 1, 3 5 2 rg=200 rg rg EFC6601R n-channel silicon mosfet lithium-ion battery charging and discharging switch 1 : source1 2 : gate1 3 : source1 4 : source2 5 : gate2 6 : source2 sanyo : efcp2718-6ce-020 2.7 1.81 0.2 654 123 0.65 0.65 0.3 EFC6601R-tr tr ma lot no.
EFC6601R no. a2151-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max source-to-source breakdown voltage v (br)sss i s =1ma, v gs =0v test circuit 1 24 v zero-gate voltage source current i sss v ss = 2 0v, v gs =0v test circuit 1 1 a gate-to-source leakage current i gss v gs =8v, v ss =0v test circuit 2 1 a cutoff voltage v gs (off) v ss =10v, i s =1ma test circuit 3 0.5 1.3 v forward transfer admittance | yfs | v ss =10v, i s = 3 a test circuit 4 15.5 s static source-to-source on-state resistance r ss (on)1 i s =3a, v gs =4.5v test circuit 5 6.6 9.5 11.5 m r ss (on)2 i s =3a, v gs =4.0v test circuit 5 7.0 10 12 m r ss (on)3 i s =3a, v gs =3.8v test circuit 5 7.3 10.5 13 m r ss (on)4 i s =3a, v gs =3.1v test circuit 5 8.0 11.5 15 m r ss (on)5 i s =3a, v gs =2.5v test circuit 5 9.0 13 17 m turn-on delay time t d (on) v dd =10v, v gs =4.5v, i s =3a test circuit 7 280 ns rise time t r 630 ns turn-off delay time t d (off) 53000 ns fall time t f 47000 ns total gate charge qg v dd =10v, v gs =4.5v, i s =13a test circuit 8 48 nc forward source-to-source voltage v f(s-s) i s =3a, v gs =0v test circuit 6 0.76 1.2 v ordering information device package shipping memo EFC6601R-tr efcp 5,000pcs./reel pb free and halogen free
EFC6601R no. a2151-3/8 test circuits are example of measuring fet1 side g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 a g2 g1 s1 s2 v if 4.5v vgs=0v g2 g1 s1 s2 v is g2 g1 s1 s2 pg r rl a g2 g1 s1 s2 v pg r rl test circuit 1 i sss test circuit 2 i gss test circuit 3 v gs (off) test circuit 4 | y fs | test circuit 5 test circuit 6 v f(s-s) r ss (on) test circuit 7 test circuit 8 qg t d (on), t r , t d (off), t f when fet1 is measured,+4.5v is added to v gs of fet2. v gs v gs v gs v gs 50 i g =1ma when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited. v ss v ss v ss v dd v dd when fet1 is measured, gate and source of fet2 are short-circuited. when fet1 is measured, gate and source of fet2 are short-circuited.
EFC6601R no. a2151-4/8 gate to source voltage, v gs -- v static source to source on state resistance, r ss (on) -- m ambient temperature, ta -- c r ss (on) -- ta r ss (on) -- v gs static source to source on state resistance, r ss (on) -- m i s -- v gs source current, i s -- a gate to source voltage, v gs -- v i s -- v f(s-s) source current, i f -- a forward source to source voltage, v f(s-s) -- v 0 0.4 0.5 0.9 0.7 0.8 0.6 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 0 it16980 0 0.5 1.0 1.5 2.0 2 9 5 11 7 4 1 3 10 6 12 13 14 8 15 v ss =10v --25 c ta=75 c 25 c it16982 --25 c 25 c ta=75 c v gs =0v 10 7 5 3 s/w time -- i d switching time, s/w time -- ns source current, i s -- a total gate charge, qg -- nc qg -- v gs gate to source voltage, v gs -- v 1k 7 5 3 100 2 10k 7 5 3 2 7 5 3 2 100k 0.01 2 0.1 357 2 1.0 357 2 10 357 2 it16983 v ss =10v v gs =4.5v t d (off) t r t f t d (on) 0 102030405060 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it16978 v ss =10v i s =13a --60 --40 --20 0 20 40 60 80 100 120 140 160 0 2 6 14 18 20 10 8 4 16 12 i s =3a, v gs =2.5v i s =3a, v gs =4.5v i s =3a, v gs =3.1v it16977 it16976 ta=25 c i s =3a 06 4 2810 0 10 20 30 45 35 5 15 25 40 50 i s =3a, v gs =4v i s =3a, v gs =3.8v i s -- v ss drain current, i s -- a drain to source voltage, v ss -- v it16979 0 0 6.0 5.0 5.5 4.0 4.5 3.0 3.5 0.3 1.0 0.1 0.9 0.5 0.7 0.4 0.2 0.6 0.8 2.0 2.5 1.0 0.5 1.5 v gs =1.5v 2.5v 4.0v 3.1v 4.5v 10.0v source current, i s -- a | y fs | -- i s forward transfer admittance, | y fs | -- s it16981 ta= --25 c 75 c 25 c v ss =10v 2 0.1 0.01 7 5 3 2 1.0 7 5 3 2 10 7 5 3 0.001 0.01 23 57 0.1 2357 1.0 23 57 10 22 357 2 3
EFC6601R no. a2151-5/8 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it16985 0 0 20 40 1.0 1.5 60 80 100 120 140 0.5 2.0 2.5 when mounted on ceramic substrate (5000mm 2 0.8mm) a s o source voltage to source voltage, v ss -- v source current, i s -- a operation in this area is limited by r ds (on). dc operation 100 s 1ms 10ms 100ms it16984 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 7 10 0.01 0.1 0.01 57 23 2 57 23 3 2 57 3 1.0 10 5 i sp =60a(pw 10 s) i s =13a ta=25 c single pulse when mounted on ceramic substrate (5000mm 2 0.8mm) 100
EFC6601R no. a2151-6/8 taping speci cation EFC6601R-tr
EFC6601R no. a2151-7/8 mass (g) unit 0.0024 * for reference mm unit: mm outline drawing land pattern example EFC6601R-tr
EFC6601R ps no. a2151-8/8 this catalog provides information as of november, 2012. speci cations and information herein are subject to change without notice. note on usage : since the EFC6601R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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